IIT Delhi Recruitment 2026 – Research Associate Vacancies
INR 58,000 per month + HRA @ 27%
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IIT Delhi Recruitment 2026 – Research Associate Vacancies
The Indian Institute of Technology (IIT) Delhi has released an official recruitment notification for Research Associate (RA) positions under a DRDO-funded research project. Eligible Indian nationals with relevant qualifications and research experience can apply through email before the last date.
Organization Details
Particulars | Details |
|---|---|
Organization | Indian Institute of Technology (IIT) Delhi |
Department/Centre | Centre for Applied Research in Electronics (CARE) |
Advertisement No. | IITD/IRD/128/2026 |
Notification Date | 27 May 2026 |
Job Type | Contractual Project Position |
Location | New Delhi |
Project Details
Particulars | Details |
|---|---|
Project Title | Design and Measurement of InP-based HEMT Devices for THz Applications (RM00119G) |
Funding Agency | Department of Defence Research & Development Organisation (DRDO), Ministry of Defence |
Principal Investigator | Prof. Rahul Mishra |
Project Duration | Up to 28 March 2029 |
Vacancy Details
Post Name | Vacancies | Monthly Fellowship |
|---|---|---|
Research Associate (A) | 01 | INR 58,000 + HRA @ 27% |
Research Associate (B) | 01 | INR 58,000 + HRA @ 27% |
Total Vacancies: 02
Eligibility Criteria
Research Associate (A)
Essential Qualification
Ph.D. in Electronics, Physics, or a related field.
Required Experience
Semiconductor/Nanoelectronic device design.
Fabrication and characterization of devices.
Experience with InP/GaN/GaAs HEMTs.
TCAD tools and thin-film deposition.
Nanofabrication and device measurements.
Team leadership, data analysis, and reporting.
Research Associate (B)
Essential Qualification
First Class M.Tech./MS with 03 years of research experience or
Ph.D. in Electronics, Physics, or a related field.
Required Experience
Semiconductor device physics and simulation.
TCAD tools such as Silvaco, Synopsys Sentaurus, or equivalent.
Experience with III-V semiconductor devices.
Knowledge of InP/GaN/GaAs HEMTs.
Desirable Qualification
TCAD-based design and optimization of InP HEMT multilayer epitaxial structures and device geometry.
Salary Details
Post | Pay |
|---|---|
Research Associate (A) | INR 58,000 per month + HRA @ 27% |
Research Associate (B) | INR 58,000 per month + HRA @ 27% |
Selection Process
The selection process may include:
Shortlisting of applications.
Online interview.
Final selection based on qualifications, experience, and interview performance.
Note: IIT Delhi may apply higher criteria for shortlisting candidates.
Application Process
Eligible candidates should:
Download Form No. IRD/REC-4 from the IIT Delhi IRD website.
Fill in all required details regarding:
Educational qualifications
Percentage of marks/division
Research/work experience
Other relevant information
Send the completed application form via email.
Email Submission
Email ID: ramis@care.iitd.ac.in
Mention the Advertisement Number (IITD/IRD/128/2026) in the subject line.
Important Dates
Event | Date |
|---|---|
Notification Date | 27 May 2026 |
Last Date to Apply | 10 June 2026 |
Application Deadline Time | 5:00 PM |
Important Instructions
Appointment will be purely contractual and co-terminus with the project.
The position may be renewed annually based on project requirements and performance.
Posts may be downgraded if suitable candidates are not available.
Only shortlisted candidates will be informed about the interview schedule.
SC/ST candidates may receive a 5% relaxation in marks as per institute norms.
Retired/superannuated government employees may be considered with salary fixed as per applicable rules.
Download Full Advertisement
This is an excellent opportunity for candidates with expertise in semiconductor devices, HEMT technologies, TCAD simulation, nanofabrication, and electronics research to work on an advanced DRDO-funded THz device development project at IIT Delhi. Interested candidates should submit their applications before 10 June 2026 (5:00 PM).
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